氧化镁MgO 氧化锆ZrO 氧化锌ZnO 二氧化碲TeO2 Wafer
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E-mail waferhome@hotmail.comSpecification for 氧化镁MgO 氧化锆ZrO 氧化锌ZnO 二氧化碲TeO2 Wafer
Grade | Dimeter | Type/dopant |
Orientaion |
crystal struction | Resistivity | Flat |
Surface/Roughness | Geometric parameter |
---|---|---|---|---|---|---|---|---|
氧化锌 ZnO 晶体 wafer | 25.4mm 50.8mm 76.5mm 100mm |
intrinsic | <0001> <11-20> <10-10> |
Hexagonal | 1 - 9 *E10 ohm-cm | N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
氧化镁 MgO 晶体wafer | 25.4mm 50.8mm 76.5mm 100mm | intrinsic | X Y Z cut | Tetragonal | 0.9 - 9 *E11 ohm-cm | N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
氧化锆 MgO 晶体 wafer | 25.4mm 50.8mm 76.5mm 100mm | intrinsic | X Y Z cut | Tetragonal | 0.9 - 9 *E11 ohm-cm | N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
二氧化碲TeO2 | 25.4mm 50.8mm 76.5mm 100mm | intrinsic | X Y Z cut | Tetragonal | 0.9 - 9 *E11 ohm-cm | N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |